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给出了As和P注入硅的电激活能与退火温度的关系.用这些结果和表示晶格去除率与退火温度的关系式,研究了损伤的晶格恢复和杂质电激活动力学,发现低剂量As注入硅,在退火过程中仅出现1～2个低的激活能.当注入剂量大于5×10~(15)cm~(-2)时,硅注入区转变成了无序层,退火过程中则出现无序层外延生长区、过渡区和电激活能区3个特征温区,并在激活能区可观察到2～3个激活能.当硅在300℃温度下注入As,注入剂量为1×10~(16)cm~(-2)时,注入层中未出现无序层,退火过程中仅有激活能区,在此区能测到3个激活能.
The relationship between the electrical activation energy and the annealing temperature of As and P implanted silicon is given.The lattice recovery and impurity activation kinetics of the damaged lattice are studied by using these results and the relationship between the lattice removal rate and the annealing temperature, At the dose of As, only 1 ~ 2 low activation energies were observed during the annealing process.When the implantation dose was more than 5 × 10 ~ (15) cm ~ (-2), the silicon implanted region was transformed into an unordered layer and annealed During the process, there are three characteristic temperature zones of the disordered layer epitaxial growth zone, the transition zone and the electrically activated energy zone, and 2 to 3 activation energy zones can be observed in the activation energy zone. When As is implanted into the silicon at a temperature of 300 ° C, When the dose was 1 × 10 ~ (16) cm ~ (-2), there was no disorder layer in the implanted layer. Only the active energy region was observed in the annealing process. Three activation energies were detected in this region.