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一种适用于制造LSI器件的新的单晶硅外延生长技术,由日本东京理工学院研制成功. 利用反应气体和水银灯加热技术,单晶硅外延层可以在比通常方法更低的温度下进行,从而避免了高温带来的影响. 正常的外延工艺,生长温度一般在1000℃以上,利用东理工学院发展的技术,温度可降低至200℃,因而不会引起杂质再分布.新工艺更适合于未来器件的制造.
A new monocrystalline silicon epitaxial growth technique suitable for fabricating LSI devices was developed by Tokyo Institute of Technology in Japan.Using reactive gas and mercury lamp heating techniques, single crystal silicon epitaxial layers can be processed at lower temperatures than typical methods, Thus avoiding the impact of high temperature.The normal epitaxial process, the growth temperature is generally above 1000 ℃, the use of technology developed by East Polytechnic, the temperature can be reduced to 200 ℃, and thus will not cause the redistribution of impurities. The new technology is more suitable for Future device manufacturing.