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Sb与GaAs(100)所构成的肖特基势垒的高度随GaAs表面成份的改变有很大的变化,这意味着GaAs费米能级的钉扎位置有了变动.这一现象难以直接用已有的金属与半导体接触的理论来解释.本文将把Bardeen关于费米能级为表面态所钉扎理论中的表面中性能级的概念加以拓广,从而对上述的现象提出一个新的解释.
The height of the Schottky barrier formed by Sb and GaAs (100) varies greatly with changes in the GaAs surface composition, which means that there is a change in the pinning position of the GaAs Fermi level, which can not be directly used The existing theory of metal-to-semiconductor contact.This paper will extend Bardeen’s notion of the Fermi level to the concept of surface neutrality in pinning theory of surface states, thus providing a new explanation for the above phenomenon .