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提出了一个实现全耗尽与部分耗尽自动转换的体接触SOI LDMOS连续解析表面势模型.采用PSP的精确表面势算法求解SOI器件的表面势方程,得到了解析的以栅压和漏压为变量的SOI器件正、背硅/氧化层界面的表面势.修正了全耗尽状态下的反型层电荷和体电荷表达式,结合PSP的模型方程,给出连续解析的体接触SOI LD-MOS直流模型.仿真结果与实验数据比较,二者吻合得很好,表明该模型能精确表征SOI LDMOS直流特性.
A continuous SOI LDMOS surface potential model was proposed to achieve full depletion and partial exhaustive auto-conversion.The surface potential equation of SOI devices was solved by the PSP’s exact surface potential algorithm, The surface potential of the positive and the back silicon / oxide interface of the SOI devices with variable variables was modified. The inversion layer charges and the bulk charge expressions in the fully depleted state were corrected. Combined with the model equations of the PSP, the continuous analytic body contact SOI LD- MOS DC model.The simulation results are in good agreement with the experimental data, which shows that the model can accurately characterize the DC characteristics of SOI LDMOS.