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本文报道了用红外光弹观测仪定量测量和研究硅单晶残余应力,测定主应力方向和主应力差。为定量计算主应力差,我们给出了几种判别干涉条纹级次的方法。介绍了硅单晶出现残余应力的几种情况。
This paper reports the quantitative measurement and study of the residual stress of silicon single crystal by infrared photoelasticity observer and the measurement of the principal stress direction and the difference of the principal stress. To quantify the principal stress difference, we give several methods to determine the interference fringe level. Several cases of residual stresses in silicon single crystals are introduced.