Drain相关论文
A new planar split dual gate (PSDG) MOSFET device, its characteristics and ex-perimental results, as well as the three d......
To implement a fully-integrated on-chip CMOS power amplifier(PA) for RFID readers,the resonant frequency of each matchin......
A new structure of a lateral n-MOST and a new level-shifting structure with multiply metal rings (MMRs) by divided RESUR......
A 4 W K-band AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(PHEMT) monolithic microwave integrated c......
Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
An improved 4H-SiC metal-semiconductor field-effect transistors (MESFETs) with step p-buffer layer is proposed,and the s......
A novel structure of a VDMOS in reducing on-resistance is proposed.With this structure,the specific on-resistance value ......
In this paper, compared with two-transistor (2T) inverter chain, the production and propagation of P-hit single event tr......
We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under g......
Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain Fi......
A new bandgap reference(BGR) curvature compensation technology is proposed,which is a kind of multiple transistor combin......
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconduc......
Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent d......
A novel fully differential high speed high resolution low offset CMOS dynamic comparator has been implemented in the SMI......
A two-stage monolithic microwave integrated circuit(MMIC) low noise amplifier(LNA) fabricated in0.5 m Ga As p HEMT is pr......
A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simul......
0.25 m Ga N HEMT with Al Ga N back barrier for high power switch application has been presented. By introducing Al Ga N ......
Low-density drain high-electron mobility transistors(LDD-HEMTs) with different F plasma treatment were investigated by s......
The contact-size-dependent characteristic of cutoff frequency f_T in bottom-contact organic thin film transistors(OTFTs)......
Atomically thin MoS_2 films have attracted significant attention due to excellent electrical and optical properties.The ......
In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors(HEMTs) ea......
One day an old Crane stood in the shallows of a lotus pond with a very dejected look upon his long face. A Crab nearby n......
目的观察气囊上滞留物的引流对呼吸机相关性肺炎（VAP）发病的影响。方法将EICU病房82例机械通气患者随机分成气囊上滞留物引流组41例......
目的 探讨经皮胆总管探查、内置管内引流手术治疗胆道多发结石的临床效果.方法 回顾性分析2002年3月至2010年9月解放军第四五一医......
This paper takes marsh in the Sanjiang Plain as an example in order to research the effect of draining on the chemical e......
A热电厂投产后增设循环水余热回收热泵供热设备,其投运期间热泵疏水溶氧量长期超标,导致后续凝结水水质溶氧超标,严重威胁机组运行......
