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基于0.25μm GaN双场板(DFP)高电子迁移率晶体管(HEMT)工艺,研制了一款2~18 GHz连续波输出功率大于10 W的功率放大器微波单片集成电路(MMIC)。MMIC中的功率器件采用源场板接地减少强电场引起的功率器件退化,提高了功率器件的击穿电压,并提取了功率器件的可定标大信号器件模型参数;基于非均匀分布式结构,利用ADS软件分别优化MMIC中10个功率器件的最佳栅宽和负载阻抗,MMIC的输入输出匹配阻抗为50Ω;采用电磁场仿真技术优化设计的MMIC芯片尺寸为4.9 mm×2.4 mm。在栅压(Vgs)为-2.4 V、漏压(Vds)为28 V、输入功率(Pin)为30 d Bm的条件下,MMIC在2~18 GHz频带内连续波饱和输出功率大于40 d Bm,功率附加效率大于25%。
Based on the 0.25μm GaN dual field plate (DFP) high electron mobility transistor (HEMT) process, a 2-18 GHz power amplifier microwave monolithic integrated circuit (MMIC) with a CW output power greater than 10 W has been developed. The power devices in the MMIC use source-field plate grounding to reduce power device degradation caused by strong electric field, improve the breakdown voltage of the power device, and extract the model parameters of the scalable large signal device of the power device. Based on the non-uniform distributed structure, Optimum gate width and load impedance of 10 power devices in MMIC were optimized respectively by ADS software. The matching impedance of input and output of MMIC was 50Ω. The size of MMIC chip optimized by electromagnetic field simulation was 4.9 mm × 2.4 mm. Under the conditions of a gate voltage (Vgs) of -2.4 V, a drain voltage (Vds) of 28 V and a input power (Pin) of 30 d Bm, the MMIC has a continuous wave saturated output power of more than 40 d Bm , Additional power efficiency of more than 25%.