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通过对动态存储时间的测量，分析了ｘ＝０．３１的ｎ型碲镉汞（Ｈ＿（１－ｘ）Ｃｄ＿ｘＴｅ）ＭＩＳ器件的少子暗电流机理．理论计算和实验结果都表明，在其工作温度区域（～７７Ｋ），通过禁带中深能级中心辅助的间接隧道电流将限制器件的电学性能。
Through the measurement of dynamic storage time, the mechanism of minority dark current of n-type HgCdTe (H 1-x CdxTe) MIS devices with x = 0.31 was analyzed. Both theoretical calculations and experimental results show that the indirect tunneling current, which is assisted by the deep level center in the forbidden band, will limit the electrical performance of the device in its operating temperature range (~ 77K).