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用液相外延技术生长的三层和四层InGaAsP/InP双异质结材料,制成了1.3μm InGaAsP/InP双异质结发光管。光功率输出(100mA)>1.0mW,最高2mW,尾纤输出功率(N.A.0.23,芯径60μ)>50μW。文中描述了器件的特性参数,还讨论了光功率的饱和特性和退化特性。
Three-layer and four-layer InGaAsP / InP double heterojunction materials grown by liquid phase epitaxy were used to fabricate a 1.3μm InGaAsP / InP double heterostructure LED. Optical power output (100mA)> 1.0mW, up to 2mW, pigtail output power (N.A.0.23, core diameter 60μ)> 50μW. In this paper, the characteristic parameters of the device are described. The saturation and degeneration characteristics of the optical power are also discussed.