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由于半导体环形激光器器件尺寸不再受解理面的限制,结构简单紧凑,容易集成,近年来成为集成光源领域的研究热点之一。采用MOCVD系统外延生长InAlGaAs多量子阱激光器材料,利用BCl3,Cl2和Ar刻蚀气体的ICP干法刻蚀技术和PECVD介质钝化工艺,研制了基于环形谐振腔的双波长半导体激光器样品,实现了激光光源的单片集成。该激光器由两个半径分别为200和205μm的环形谐振腔和一条脊宽为3.4μm的直波导耦合构成,两者之间的耦合间距为1.0μm,当两个环形激光器的注入电流分别为50.12和50.22 mA时,对应的激射波长为1 543.12和1 545.64 nm。改变激光器的注入电流,可调节峰值波长与波长间隔。
As the size of the semiconductor ring laser device is no longer limited by the cleavage plane, the structure is simple and compact and easy to integrate. In recent years, the semiconductor ring laser device has become one of the hot topics in the field of integrated light sources. The InAlGaAs MQW laser material was epitaxially grown by MOCVD system. The dual wavelength semiconductor laser sample based on ring resonator was developed by ICP dry etching of BCl3, Cl2 and Ar gas and PECVD dielectric passivation process. Single-chip laser light source integration. The laser consists of two ring resonators with diameters of 200 and 205μm respectively and a straight waveguide with a ridge width of 3.4μm. The coupling distance between them is 1.0μm. When the two ring lasers are injected with currents of 50.12 And 50.22 mA, the corresponding lasing wavelengths are 1 543.12 and 1 545.64 nm. By changing the laser’s injection current, the peak wavelength and wavelength spacing can be adjusted.