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据报道，日本冲电气工业新开发了发光效率提高10倍以上的发光二极管阵列。过去开发的GaAsxP（1－x）LED）阵列，驱动电流为3mA时的每单位电流的发光强度约为5μW。这次开发的LED阵列．在发光层采用了AlxGa（1－x）As材料．在驱动电流4mA条件下．每单位电流的发光强度高达100μW
It is reported that Japan’s Oki Electric Industry has newly developed a more than 10 times the luminous efficiency of the light-emitting diode array. The GaAsxP (1-x) LED arrays developed in the past have a luminous intensity of about 5 μW per unit current at a driving current of 3 mA. The development of the LED array. AlxGa (1-x) As material was used for the light-emitting layer. In the driving current 4mA conditions. Luminous intensity per unit of current up to 100μW