论文部分内容阅读
讨论了小方栅脉冲下零偏置源MOS结构栅电荷弛豫的机制.证明了当费米能级接近少子带边时,引起栅电荷弛豫的起因将由界面态俘获发射电荷的过程变成受其延迟的表面少子扩散漂移过程.对后一过程进行理论分析导出的栅电荷公式与实验取得了一致.在此基础上提出了根据栅电荷波形参数确定栅电荷变化量中界面态贡献的大小,进而测定近少子带边一侧界面态密度的测量原理.获得了覆盖的能量范围一直延伸到距少子带边 0.05 eV处的界面态密度能量分布.在不同类型样品中获得了具有共同特征的结果.
The mechanism of the gate charge relaxation in the zero-bias MOS structure with small square gate pulse is discussed. It is proved that the reason of the gate charge relaxation when the Fermi level is close to the minority sub-band edge will be that the process of the trapped emission charge by the interface state becomes Which is delayed by the diffusion of the surface minority.The drift of the gate charge derived from the theoretical analysis of the latter process is consistent with the experiment.On the basis of this, the contribution of the interface state contribution in determining the gate charge variation is proposed based on the gate charge waveform parameters , And then the principle of density of state near the edge of the subband side was measured.The energy range of the covered energy was extended to the interface state density energy distribution at the 0.05 eV from the edge of the minority subbands.The energy distributions of the interface states with common features result.