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红外探测系统中的光敏元件需要HgCdTe外延膜。通常,HgCdTe生长于CdTe衬底上,这种衬底具有能与HgCdTe晶格紧密匹配且又能不受HgCdTe膜自动掺杂影响的诱人性能。但是,CdTe衬底昂贵、脆、不能得到大的面积且与平常得到的衬底如Si、GaAs、Al_2O_3(兰宝石)或InSb相比结晶质量较差。因此需要另选一种基片材料。兰宝石就是一种诱人的候选者,这是因为它的结晶质量高、成本低、有刚度且能得到大的面积。液相外延技术是外延生长HgCdTe用的最普通的技术。然而,由于生长的熔料不能湿润兰宝石衬底,从而防碍了在兰宝石衬底上液相外延生长。为在兰宝石衬底上生长薄膜,最近
Photosensitive devices in the infrared detection system require HgCdTe epitaxial films. In general, HgCdTe is grown on a CdTe substrate that has attractive properties that closely match the HgCdTe lattice without being affected by the auto-doping of the HgCdTe film. However, the CdTe substrate is expensive, brittle, does not give a large area, and has poor crystalline quality compared to commonly-obtained substrates such as Si, GaAs, Al 2 O 3 (sapphire) or InSb. Therefore, an alternative substrate material is needed. Sapphire is an attractive candidate because of its high crystalline quality, low cost, rigidity and large area available. Liquid-phase epitaxy is the most common technique for epitaxial growth of HgCdTe. However, since the grown melt does not wet the sapphire substrate, liquid-phase epitaxial growth on the sapphire substrate is hindered. Thin film for growth on sapphire substrate, recently