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在非晶形玻璃衬底上同时蒸发InSb和InAs,再用液相微熔区再结晶法生长成n型InAs_(0.07)Sb_(0.93)半导体固溶体膜。这种膜虽是多品的,而且厚度不到5微米,但与以往报道的块状或外延生长的InAs_xSb_(1-x)单晶相比,电学和电磁学参数不是相近就是更好。
InSb and InAs were simultaneously evaporated on an amorphous glass substrate and then grown into an n-type InAs_ (0.07) Sb_ (0.93) semiconductor solid solution film by liquid-phase micro-melt recrystallization. Although this film is multi-dimensional and has a thickness of less than 5 microns, it is better that the electrical and electromagnetic parameters are not close and similar to the previously reported bulk or epitaxial growth of InAs_xSb_ (1-x) single crystals.