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本文描述作者研制的碘钨灯快速退火装置及其工艺实验。该装置具有结构非常简单、成本非常低廉以及操作十分方便等优点。使用该装置对注入硼和磷离子的硅单晶进行了灯退火实验。电学特性测量和SIMS测量结果表明:该装置退火的样品,电激活率与常规热退火相同,而注入杂质的再分布比热退火小得多。采用电子通道图技术检测样品注入层的晶格完整性。结果表明:经过该装置退火后,样品注入层由非晶恢复为单晶。文中对退火样品的薄层电阻和退火过程中杂质的扩散长度,进行了简单的计算,结果与实验基本相符。
This article describes the author’s rapid development of iodine-tungsten lamp annealing process and experiment. The device has the advantages of simple structure, very low cost and convenient operation. A lamp annealing experiment was carried out on the silicon single crystal implanted with boron and phosphorus ions using this device. Electrical measurements and SIMS measurements show that the annealed samples have the same rate of electrical activation as the conventional thermal anneal, while the recombination of implanted impurities is much less than thermal annealing. The lattice integrity of the implanted layer of the sample was tested by electronic channel diagram technique. The results show that after the device is annealed, the sample injection layer is recovered from amorphous to single crystal. In this paper, we simply calculate the sheet resistance of the annealed sample and the diffusion length of the impurity in the annealing process. The results are in good agreement with the experimental results.