论文部分内容阅读
用Zn作扩散源在封闭的真空石英管中,研究了Zn在Ge中的扩散问题,给出了x_j-t~(1/2)关系和C-1/T关系,比较了扩散源温度对样品表面形貌的影响。采用双温区扩散工艺可获得表面光亮的样品。采用真空退火工艺可使扩散样品表面漏电流降低。
Diffusion of Zn in Ge was studied in a closed vacuum quartz tube using Zn as diffusion source. The relationship between x_j-t ~ (1/2) and C-1 / T was given. The temperature dependence of diffusion source Effect of sample surface topography. The use of dual temperature zone diffusion process to obtain a bright surface samples. The vacuum annealing process can reduce the leakage current of the diffused sample surface.