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基于商用工艺线生产抗辐射器件具有一定的通用性,需要对商用工艺本征的抗辐射能力进行评估。综述了当前最新绝缘体上硅鳍式场效应晶体管(SOI FinFET)和体硅FinFET工艺的鳍宽和敏感面积对辐射效应的影响。SOI FinFET和体硅FinFET工艺的抗总剂量能力随着鳍宽的变化呈现相反的趋势。SOI FinFET的阈值电压漂移和亚阈值摆幅的退化随着鳍宽减小而减小,而体硅FinFET工艺的漏电流随着鳍宽减小而增大。FinFET工艺由于其自身结构的特点,与相同工艺节点下的平面工艺相比,敏感面积更小,抗单粒子翻转能力更好。从整体趋势来看,随着工艺节点的减小,FinFET工艺的本征抗总剂量能力较为可观,而本征抗单粒子翻转能力较差。
The production of radiation-resistant devices based on commercial process lines has some commonality that requires evaluation of the inherent radiation resistance of commercial processes. The effects of fin width and sensitive area on the radiation effects of the latest SOI FinFET and bulk FinFET processes are reviewed. Anti-total dose capability of SOI FinFETs and bulk FinFETs presents the opposite trend as fin widths change. The threshold voltage drift and subthreshold swing degradation of SOI FinFET decrease with the decrease of fin width, while the leakage current of bulk FinFET process increases with the decrease of fin width. FinFET technology due to its own structural characteristics, compared with the same process nodes under the planar process, the sensitive area is smaller, anti-single-particle turnover better. From the overall trend, with the reduction of process nodes, the intrinsic anti-total dose capacity of FinFET process is considerable, while the intrinsic anti-single-particle turnover ability is poor.