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研究了沉积温度、ＳｎＣｌ４溶液的浓度、掺Ｐｄ等对ＳｎＯ２／Ｓｉ光电压的影响，测量了ＳｎＯ２／Ｓｉ的光电压谱，得出最佳的制备条件，进行了有关计算和分析。
The effects of deposition temperature, concentration of SnCl4 solution and Pd on the photovoltage of SnO2 / Si were investigated. The photovoltage spectra of SnO2 / Si were measured and the optimal preparation conditions were obtained. The relevant calculations and analyzes were carried out.