论文部分内容阅读
一、引言 自从1979年Le Comber等研制出第一个非晶硅薄膜晶体管(α-Si TFT)以来,对α- Si TFT的研究有了很大进展。α-Si TFT具有大的开态/关态电流比,其制造工艺与常规集成电路工艺兼容,而且工艺处理温度低,可采用廉价的透明玻璃作为衬底,所以α-Si TFT适合用作液晶显示矩阵电路的开关元件。本文研制的液晶显示屏以G-Si TFT为矩阵电路的开关元件,采用TN-FE型的液晶显示单元,并配以用NMOS IC工艺形成的驱动电路。文中介绍了α-Si TFT的工艺制造过程;分析了其静态和动态特性;对α-Si TFT和液晶材料的性能要求作了详细讨论;系统地描述了液晶显示屏的工作原理和驱动电路的设计。
I. Introduction Since the first amorphous silicon thin film transistor (α-Si TFT) developed by Le Comber et al. In 1979, great progress has been made in the research of α-Si TFTs. The α-Si TFT has a large on / off current ratio, its manufacturing process is compatible with conventional integrated circuit processes, and its process temperature is low and inexpensive inexpensive transparent glass can be used as the substrate. Therefore, the α-Si TFT is suitable as a liquid crystal Display elements of the matrix circuit. The liquid crystal display developed in this paper uses the G-Si TFT as the switching element of the matrix circuit, adopts the TN-FE type liquid crystal display unit, and is matched with the driving circuit formed by the NMOS IC process. In this paper, the manufacturing process of α-Si TFT is introduced. Its static and dynamic characteristics are analyzed. The performance requirements of α-Si TFT and liquid crystal material are discussed in detail. The working principle of liquid crystal display design.