用激光化学气相沉积方法得到了无定形硅薄膜。用干涉仪测得薄膜厚度为微米量级,沉积速率为100(?)/min,用扫描电镜测出无定形硅颗粒平均线度为40～50(?),用激光拉曼光谱仪测出其拉曼频移为480cm~(-1)实验得到了沉积速率随气体峰值温度变化曲线,认为沉积速率受限步骤是硅烷的气相反应,求出反应活化能为192.6kJ/mol。 Amorphous silicon thin films were obtained by laser chemical vapor deposition. The thickness of the film measured by the interferometer is on the order of microns, the deposition rate is 100 (?) / Min, the average degree of amorphous silicon particles is 40 ~ 50 (?) Measured by scanning electron microscopy, and its Raman spectroscopy Raman shift of 480cm ~ (-1) experiment was obtained with the deposition rate curve with the peak temperature of gas, that the deposition rate is limited to silane gas phase reaction, the activation energy was obtained 192.6kJ / mol.