Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:z325z0
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This paper presents a high-Q RF MEMS oscillator consisting of a micro-disk resonator and low noise feedback circuits. The oscillator has high frequency stability and low phase noise. The two-port resonator was hermetically encapsulated using low-cost Sn-rich Au–Sn solder bonding, which significantly improves the frequency stability. A low noise oscillator circuit was designed with a two-stage amplifying architecture which effectively improves both the frequency stability and phase noise performance. The measured phase noise is –96 d Bc/Hz at1 k Hz offset and –128 d Bc/Hz at far-from-carrier offsets. Moreover, the medium-term frequency stability and Allan deviation of the oscillator are˙4 ppm and 10 ppb, respectively. The oscillator is a promising component in future wireless communication application. The paper presents a high-Q RF MEMS oscillator consisting of a micro-disk resonator and low noise feedback circuits. The two-port resonator was hermetically encapsulated using low-cost Sn-rich Au -Sn solder bonding, which significantly improves the frequency stability. This low noise oscillator circuit was designed with a two-stage amplifying architecture which effectively improves both the frequency stability and phase noise performance. The measured phase noise is -96 d Bc / Hz at1 k Hz offset and -128 d Bc / Hz at far-from-carrier offsets. Moreover, the medium-term frequency stability and Allan deviation of the oscillator are ˙4 ppm and 10 ppb, respectively. The oscillator is a promising component in future wireless communication application.
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