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本文在很宽的导电范围内对多孔硅（ＰＳ）的形成与性质作了系统研究提供了四种不同掺杂的ＳｉＨＦ腐蚀系统的电流一电压特性。对实验结果进行了理论分析。
The systematic study of the formation and properties of porous silicon (PS) over a wide range of conductivities has provided the current-voltage characteristics of four different doped SiHF corrosion systems. The experimental results of a theoretical analysis.