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本文详细讨论了离子束混合下,Ce/Si〈100〉双层膜体系界面反应的动力学过程以及硅化物的形成规律.样品经150KeV Ar离子注入,辐照温度从LNT到300℃,剂量从5×X10~(14)到8.1×10~(16)Ar/cm~2.界面反应形成的硅化物为CeSi_2,其结构为体心正交结构.硅化物是分层生长的,厚度与注入剂量的平方根成线性关系,这说明界面反应是扩散控制的.与近贵金属/硅体系和难熔金属/硅体系相比较可以看出,稀土金属Ce/Si体系的相变过程与难熔金属/硅体系的相似;而混合的动力学行为与近贵金属/硅体系的相似.本文还讨论了化学驱动力和辐射增强扩散对混合的贡献.
In this paper, the kinetics of interfacial reaction and the formation of silicide in Ce / Si <100> bilayer membrane system are discussed in detail.By 150KeV Ar ion implantation, the irradiation temperature from LNT to 300 ℃, the dose from 5 × X10 ~ (14) to 8.1 × 10 ~ (16) Ar / cm ~ 2. The silicide formed by interfacial reaction is CeSi_2 and has a structure of body centered and orthorhombic structure. The square root of the dose has a linear relationship, indicating that the interface reaction is diffusion controlled.Compared with the near noble metal / silicon system and the refractory metal / silicon system, we can see that the phase transition process of the rare earth metal Ce / Si system and the refractory metal / Silicon systems, and the kinetics of mixing are similar to that of near-noble metal / silicon systems.The contribution of chemical driving force and radiation-enhanced diffusion to the mixing is also discussed.