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在功率半导体器件中,比较成熟,应用较广泛的主要是功率仅极晶体管、晶闸管和功率MOSFET.无论在电力控制、还是功率放大应用中,各自均具有其特色和局限性.随着VLSI工艺的发展,微细加工技术的成熟,特别是近年来在技术发展的基础上,人们设计思想的解”放,产生了双极/MOS复合为一体,取其所长,补其之短,在结构上集成,在工艺上兼容的新型复合器件.这些复合器件,较之分立的功率MOSFET功率双极器件,在性能上大有突破;促进了功率半导体器件向更广的应用领域渗透.本文在粗略分析功率MOSFET,功率双极晶体管、晶闸管现状的基础上,讨论和介绍了几种新型的双极/MOS功率复合器件,并估计了这方面的发展.
In power semiconductor devices, the more mature and widely used are mainly power-only transistors, thyristors and power MOSFETs, which have their own characteristics and limitations in both power control and power amplification applications. With the development of VLSI process Development, development of micro-processing technology, especially in recent years, based on the development of technology, people design the solution of the idea of "release, resulting in a bipolar / MOS composite as one, take its director, make up for the short, structurally Integrated, technically compatible new composite devices, these composite devices, compared to discrete power MOSFET power bipolar devices, a major breakthrough in performance, and promote the power semiconductor devices to a wider range of applications penetration.In this paper, a rough analysis Power MOSFET, power bipolar transistor, thyristor based on the status quo, discussed and introduced several new bipolar / MOS power devices, and estimated the development in this area.