利用恒流注入法和Ｉ－Ｖ测试方法研究了用于ｐＭＯＳ剂量计的国产ｐＭＯＳＲＡＤＦＥＴ的温度效应，结合ＭＯＳ晶体管阈值和电流－电压方程的理论公式推导分析了温度对阈电压、沟道载流子迁移率的影响，对“零温度系数点”从理论上进行了讨论，探讨了辐照对“零温度系数点”的影响。实验结果表明，采用“零温度系数”电流作为注入的恒流来测量栅源电压能提高剂量计电压读出的精度，起到对温度补偿的作用。 The temperature effect of domestic pMOSRADFETs used in pMOS dosimeters was investigated by the constant current injection method and the I-V test method. The relationship between temperature and threshold voltage, channel carrier The influence of the “zero temperature coefficient point” on the “zero temperature coefficient point” is discussed in theory. The experimental results show that the use of “zero temperature coefficient” current as the injected constant current to measure the gate-source voltage can improve the accuracy of the dosimeter voltage readout, and play a role in temperature compensation.