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亚微米沟道n~+多晶或n~+多晶硅化物栅CMOSFET具有较大亚阈值漏电流和较小的驱动电流。CMOS VLSI理想的栅材料所具有的功函数应是硅的电子亲和能加上硅禁带能的一半。钨是亚微米特征尺寸CMOS IC较好的栅材料之一。与n~+多晶硅栅CMOS/IC相比,钨和硅化钨栅CMOS/IC可望有更高的速度和更小的漏电流,而且制造工艺也更简单。本文分析了关于用n~+多晶硅或n~+多晶硅化物作亚微米CMOS/IC栅材料所受限制的原因。
Submicron channel n ~ + polycrystalline or n ~ + polycide gate CMOSFETs have large subthreshold leakage currents and small drive currents. The ideal gate material for a CMOS VLSI has a work function that is equal to one half of the silicon’s electron affinity plus the silicon forbidden bandgap energy. Tungsten is one of the better gate materials for submicron feature size CMOS ICs. Compared with n ~ + polysilicon gate CMOS / IC, tungsten and tungsten silicide gate CMOS / IC is expected to have higher speed and smaller leakage current, and the manufacturing process is also more simple. This paper analyzes the reasons for the limitations of submicron CMOS / IC gate materials using n ~ + polysilicon or n ~ + polysilicon.