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一种工作在26千兆赫的采用介质谐振器的稳频微波集成电路碰撞雪崩渡越时间二级管振荡器已研制成功。在设计这种工作在高频范围的振荡器时,要考虑许多参数对频率稳定性的影响。本文讨论了由各种因素引起的振荡频率的变化。这些因素是:介质谐振器谐振频率的漂移,二极管电抗的偏移,二极管与谐振器之间的电长度的变化;所有这些变化都是由温度改变引起的。本文还介绍了频率高度稳定的振荡器的设计规则。利用这些技术,我们已制作出一台微波集成电路碰撞雪崩渡越时间二极管振荡器。它的性能是:在0℃至50℃的温度范围内,频率稳定度小于±5.0×10~(-6),输出功率变化小于±2.0分贝,输出功率大于23毫瓦分贝。
One type of FSB IC using a dielectric resonator operating at 26 Ghz has been developed successfully in the event of an avalanche transit time diode oscillator. When designing this type of oscillator for operation in the high frequency range, the influence of many parameters on the frequency stability is taken into account. This article discusses the variations in oscillation frequency caused by various factors. These factors are: the dielectric resonator resonant frequency drift, the diode reactance offset, diode and resonator electrical length changes; all these changes are caused by temperature changes. This article also describes the design rules for oscillators with high frequency stability. Using these techniques, we have fabricated a microwave integrated circuit for impacting an avalanche transit time diode oscillator. Its performance is: in the temperature range of 0 ℃ to 50 ℃, the frequency stability is less than ± 5.0 × 10 -6, the output power changes less than ± 2.0 dB, the output power is greater than 23 milliwatts dB.