固体微波器件研究的最新和最重要的进展之一是研制出了中功率砷化镓肖特基势垒场效应晶体管(GaAsMESFET)。RCA 的研究工作已确认此种器件可用做中功率的放大器和振荡器。我们已做出9千兆赫下,输出功率高达1瓦,功率附加效率η=(P_(out)-P_(in))/P_(dc)为16%(线性增益为5.5分贝)的单元器件。4千兆赫下功率附加效率高达35%,9千兆赫下为21%的器件已经实现。另外,也研制出9.15千兆赫下输出功率 One of the most recent and most significant advances in solid-state microwave devices is the development of mid-power gallium arsenide Schottky barrier field-effect transistors (GaAsMESFETs). Research by RCA has confirmed that such devices can be used as medium power amplifiers and oscillators. We have made unit devices with output powers of up to 1 Watt at 9 GHz, power added efficiency η = (P out -P in) / P dc 16% (linear gain 5.5 dB). Devices with an additional efficiency of up to 35% at 4 GHz and 21% at 9 GHz have been implemented. In addition, the output power is also developed at 9.15 GHz