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未掺杂的GaAs和n型AlGaAs相接触,用栅极电场来控制在GaAs一侧产生的载流子,富士通研究所研制了这种场效应晶体管,其特点是,在77°K下电子迁移率的实测值高达37800cm~2V~(-1)S~(-1)。因此可望高速工作,但要以低温为前提。为什么低温时迁移率就上升了呢?影响迁移率的参量有晶格散射和杂质散射。如果温度上升,晶格振动就加剧,运动着的电子容易受振动着的晶格散射。如果温度降低,晶格振动就
The undoped GaAs and n-type AlGaAs are in contact with each other, and the gate electric field is used to control the carriers generated on the GaAs side. Fujitsu Laboratories has developed this field-effect transistor, which is characterized by electron transfer at 77 ° K The measured value is up to 37800cm ~ 2V ~ (-1) S ~ (-1). It is expected to work at high speed, but to low temperature as a prerequisite. Why does the mobility increase at low temperatures? The parameters that influence the mobility are lattice and impurity scattering. If the temperature rises, the lattice vibration intensifies and the moving electrons are easily scattered by the vibrating lattice. If the temperature decreases, the lattice vibrates