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在砷化镓样品的自发辐射现象中引入了辐射复合系数的一般概念。对于高增益砷化镓光导开关中流注的自发辐射现象,依据求简单平均值的方法和归一化条件,近似确定了平均辐射复合系数为η珔(883)≈0.1125。导出了各辐射波长的辐射复合系数与平均辐射复合系数之间的关系,计算了辐射波长为890nm的辐射复合系数值为η(890)=0.1182,代入该值计算的最大光输出能量与实验观察结果吻合,证明该近似方法及其结果是合理的。
The general concept of radiative recombination coefficients has been introduced in the phenomenon of spontaneous emission of gallium arsenide samples. For the spontaneous emission phenomena of high-gain GaAs photoconductive switches, the average radiation recombination coefficient is approximately determined as η 珔 (883) ≈0.1125 according to the simple average method and normalization conditions. The relationship between the radiative recombination coefficient and the average radiative recombination coefficient of each radiation wavelength is derived. The radiative recombination coefficient at a wavelength of 890 nm is calculated as η (890) = 0.1182. The maximum radiant energy calculated by this value and the experimental observation The results agree with each other, which proves that the approximate method and its result are reasonable.