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采用Ｘ射线结构分析方法，对磁控溅射法制备的含过量ＰｂＯ的ＰＬＺＴ（１４／０／１００）薄膜在退火过程中的晶化行为进行了研究。结果表明，薄膜中过量的ＰｂＯ具有促进钙钛矿结构形成，降低晶化温度，并且抑制焦绿石相生长的作用。铁电性能测试结果表明，ＰｂＯ的过量能改善铁电薄膜的耐击穿性，但过量太多的ＰｂＯ会导致薄膜铁电性能变坏。
The crystallization behavior of PLZT (14/0/100) thin films containing excess PbO prepared by magnetron sputtering during annealing was investigated by X-ray structure analysis. The results show that the excessive PbO in the film can promote the formation of perovskite structure, decrease the crystallization temperature and inhibit the growth of pyrochlore phase. The test results of ferroelectricity show that the excessive PbO can improve the breakdown resistance of the ferroelectric thin films, but too much PbO can lead to the deterioration of the ferroelectric properties of the thin films.