The resistive random access memory(RRAM) device has been widely studied due to its excellent memory characteristics and ......

给出了薄膜气敏材料性能的测试结果：存在最佳灵敏度膜厚l *（ l *≈1500?）；动态特性；膜越薄响应越快；存在最佳掺杂（ CeO2）量x%，x的取值范围为......