Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepar......

用反应磁控溅射法在不同偏压下沉积了Zr-Si-N扩散阻挡层.结果表明:Zr-Si-N膜的成分、电阻率和结构均随偏压的改变而不同;随着溅射......