This paper presents a new technique in the high dielectric constant composite oxide film preparation.On the basis of nan......

采用坩埚下降法生长了LED用硅掺杂取向的GaAs晶体.选用带籽最槽的PBN坩埚作为生长容器,密封在石英安瓶中以防止生长过程中As蒸汽挥......

以TiCl_4和Na_2SiO_3为原料,采用水热法制备了一系列掺杂Si的纳米TiO_2粉体.采用X射线衍射分析(XRD),红外光谱(FT-IR),紫外可见吸......