一、封闭硅栅CMOS工艺特点从结构方面考虑,硅栅自对准是提高CMOS电路速度有效的结构技术。图1所示的封闭结构,是栅将漏完全包围的硅栅自对准结构。漏的四周都是有源区,这样有效宽长比就大,有利于提高跨导(g_m)。此外,由于漏的面积较小,减小了漏的势垒电容,并且栅漏覆盖电容仅仅是掺杂横向扩散的影响,因而,使 First, closed-gate silicon gate CMOS process features from the structural considerations, silicon gate self-aligned CMOS circuit is to improve the speed of effective structural technology. The closed structure shown in Figure 1 is a silicon gate self-aligned structure that completely surrounds the gate with a drain. Leakage around the active area, so that the effective width to length ratio is large, help to improve the transconductance (g_m). In addition, since the drain area is small, the drain barrier capacitance is reduced, and the gate-drain cover capacitance is only influenced by the lateral diffusion of the doping. Therefore,