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实验研究表明,持续光照后会引起a-Si:H/a-SiN_x:H多层膜内应力的变化;并且这种变化与膜中Si-H键含量,或缺陷态数量变化有关.
Experimental studies have shown that continuous light will cause a-Si: H / a-SiN_x: H multilayer film stress changes; and this change in the film Si-H bond content, or defect state quantity changes.