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本文评述了 GaAsLSI 的性能和加工工艺。最近,应用无位错 LEC 单晶和步进重复的精细光刻,在 2in 晶片内将 FET 闽值电压标准偏差降至20mV。应用这一工艺,制造了存取时间为4.1ns 的 GaAs16Kb 静态 RAM 和全功能4Kb 的 SRAM。GaAsLSI 技术有潜力从实验室研究过渡到工业应用。
This article reviews the performance and processing techniques of GaAs LSI. Recently, the use of dislocation-free LEC single crystals and step-repeat fine lithography reduced the FET threshold voltage standard deviation to 20mV in a 2-inch wafer. Using this process, a GaAs16Kb static RAM with access time of 4.1 ns and a fully functional 4Kb SRAM were fabricated. GaAsLSI technology has the potential to transition from laboratory research to industrial applications.