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最近日本 NTT 武藏野通研所制出目前最低阈值的1.5微米波长 InGaAsP/InP 隐埋双异质结结构激光器。首先使用低温液相外延防回熔技术在 InP(100)衬底上生长掺锡的4.5微米厚的 InP 层,继之生长0.2微米厚的未掺杂的 InGaAsP 有源层(生长温度为602℃),再生长掺锌的3微米厚的 InP 层,最后生长掺锌的1微米厚的 InGaAsP 帽层(禁带宽度 E_g=0.95电子伏);淀积 SiO_2,沿<110>方向用射频溅射光刻技术刻出二氧化硅条,台面刻蚀直到 n 型 InP 层;二次液相外延掺锌 p 型 InP 层(2.5微米厚)和 n 型 InP
Recently, Japan NTT Musashino Research Institute has produced the lowest threshold 1.5μm wavelength InGaAsP / InP buried double heterostructure laser. First, a tin-doped 4.5 μm thick InP layer was grown on an InP (100) substrate using a cryogenic liquid phase epitaxial backflushing technique followed by the growth of a 0.2 μm thick undoped InGaAsP active layer (growth temperature of 602 ° C. ), A 3 μm-thick InP layer doped with zinc was grown, and finally a 1 μm thick InGaAsP cap layer doped with zinc (bandgap E_g = 0.95 eV) was grown; SiO 2 was deposited and sputtered with radio frequency in the <110> direction Etched into the n-type InP layer; the second liquid-phase epitaxial zinc-doped p-type InP layer (2.5 micrometers thick) and the n-type InP