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用RF磁控溅射法，在纯Ar气中，硅基片不加热的情况下，制备了Ba铁氧体薄膜，研究了退火温度对薄膜c轴垂直取向、结构及磁特性的影响，结果表明薄膜在700℃氧气中退火可获得良好c轴垂直膜面的择优取向，该薄膜的饱和磁化强度和矫顽力分别为Ms=296emu／cm3，Hc=308761A／m。退火温度过低或过高，都不利于形成c轴垂直膜面的择优取向。
The Ba ferrite films were prepared by RF magnetron sputtering in pure Ar gas without heating the silicon substrate. The effects of annealing temperature on the c-axis vertical orientation, structure and magnetic properties of the films were investigated. The results The results show that the preferred orientation of the perpendicular c-axis film is obtained by annealing at 700 ℃ in oxygen. The saturation magnetization and coercive force of the film are respectively Ms = 296emu / cm3 and Hc = 308761A / m. Annealing temperature is too low or too high, are not conducive to the formation of c-axis perpendicular to the preferred orientation of the membrane surface.