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本文主要介绍了用光学图形发生器上的H-线曝光装置在正性胶低反射铬掩模上加工亚微米线条的工艺过程,并就加工过程中所遇到的有关问题进行了探讨,对尺寸的准确性、版面的均匀性及图形的完整性等问题测试了大量数据和拍摄了电子扫描显微照片.
This article mainly introduces the process of processing sub-micron lines on the positive glue low reflection chromium mask by the H-line exposure device on the optical pattern generator, and discusses the related problems during the processing Dimensional accuracy, layout uniformity and graphics integrity issues such as testing a large number of data and taken electronically scanned micrographs.