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做出了10千兆赫微波频率下低噪声放大砷化镓场效应晶体管,使固体放大器频率范围比使用硅晶体管提高2～3倍。GaAs FET 最高振荡频率达30千兆赫,8千兆赫和16千兆赫下测得的功率增益分别为8分贝和3分贝,见图1。4千兆赫下噪声3分贝,低于迄今为止报导的晶体管噪声水平。此外,场效应晶体管噪声随频率的变化较小,8千兆赫下仅为5分贝,见图2。器件制于半绝缘 GaAs 衬底上的10~(17)厘米~(-3)掺硫外延薄膜上。外延层必须很薄(约0.3
Made 10GHz microwave frequency low-noise amplifier gallium arsenide FET, the solid-state amplifier frequency range than the use of silicon transistors to improve 2 to 3 times. The GaAs FET has a maximum oscillation frequency of 30 GigaHertz, 8 Gigahertz and 16 Gigahertz measured power gain of 8 dB and 3 dB respectively, see Figure 1.4 Noise at 3 GHz below 3 dB, lower than those reported so far Noise level. In addition, the FET noise is less variable with frequency and is only 5 dB at 8 GHz, as shown in Figure 2. The device is fabricated on a 10 ~ (17) cm ~ (-3) ~ (-3) S-doped epitaxial thin film on a semi-insulating GaAs substrate. The epitaxial layer must be very thin (about 0.3