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飞思卡尔半导体日前推出两款采用全新先进塑料封装的超宽带RF功率氮化镓(GaN)晶体管。借助这些新型封装和产品,飞思卡尔正在释放GaN性能的真正潜力,并在提供业界最佳性能的GaN器件方面,已经取得了重大突破。飞思卡尔高级副总裁兼射频业务部总经理Paul Hart表示:“借助这两款业界领先带宽的产品,我们的客户采用一个射频器件替换两个甚至三个独立的RF PA器件,大大降低了系统成本。此外,这些器件具有超低的热阻,可使客户降低冷却系统的成本,而且它们能够以全连续波(CW)额定功率运行,满足更高温度的应用情况。”
Freescale Semiconductor has introduced two ultra-wideband RF power gallium nitride (GaN) transistors in the new advanced plastic package. With these new packages and products, Freescale is unleashing the true potential of GaN performance and has made significant strides in delivering the industry's best performing GaN devices. Paul Hart, senior vice president and general manager of RF Business Unit at Freescale, said: “With these two industry-leading bandwidth products, our customers dramatically reduce the need to replace two or even three separate RF PA devices with one RF device System cost. In addition, these devices have ultra-low thermal resistance that allows customers to reduce the cost of the cooling system and they can operate at full CW power ratings for higher temperature applications. ”