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作为集成电路的电阻单元 ,掺硼的多晶硅电阻在千欧级的范围内存在阻值不稳定性 ,尤其在金属连线下更为严重 .分析了不同工艺条件下制作的多晶硅电阻电特性和晶格特性 .结果表明 ,阻值的不稳定性主要由载流子迁移率改变引起 .通过测试和运用 Seto’ s模型计算进一步发现 ,在铝连线底下势垒高度和俘获的电荷密度均有降低 .电荷的俘获 /反俘获在多晶硅晶粒边界发生引起势垒高度的变化 ,从而导致阻值不稳定 .然后 ,借助于补偿的离子注入制作了高稳定的、阻值在千欧级的多晶硅电阻 .该方法使得多晶硅晶粒边界电荷的俘获 /反俘获对氢退火不敏感 .
As a resistor unit of integrated circuit, boron-doped polycrystalline silicon resistor has resistance instability in the range of kilo-ohms, especially under the metal connection.Analysed the electrical characteristics of polycrystalline silicon resistor and crystal produced under different process conditions The results show that the instability of resistance is mainly caused by the change of carrier mobility.Based on the test and calculation of Seto ’s model, it is found that the barrier height and the trapped charge density decrease under the aluminum connection . Charge trapping / anti-trapping occurred at the polycrystalline silicon grain boundary caused by the barrier height changes, resulting in resistance instability.Then, by means of compensation ion implantation made of high stability, resistance in the kilo-ohm polysilicon resistance This method makes the trapping / anti-capture of polycrystalline silicon grain boundary charge insensitive to hydrogen annealing.