【摘 要】
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This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor
【机 构】
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Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Devices,School of Microelectronics,
【出 处】
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Chinese Physics B
论文部分内容阅读
This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor(nMOSFET) fabricated on silicon-on-aluminum nitride(SOAN) substrate.This novel structure is named SGSOAN nMOSFET.A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented.Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices,which gives a more promising application for silicon on insulator to work at high temperatures.
This paper investigates the electrical characteristics and temperature distribution of strained Si / SiGe n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated on silicon-on-aluminum nitride (SOAN) substrate. This novel structure is named SGSOAN nMOSFET. of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can simpluling excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.
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