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采用原子层淀积(ALD)方法在4H-SiC(0001)8°N-/N+外延层上制备了超薄(~4nm)Al2O3绝缘栅高介电常数SiCMIS电容.通过对Al2O3介质膜以及Al2O3/SiC界面微结构和电学特性分析表明,实验所得Al2O3介质膜具有较好的体特性和界面特性,Al2O3薄膜的击穿电场为25MV/cm,并且在可以接受的界面态密度(2×1013cm-2)下具有较小的栅泄漏电流(8MV/cm电场下漏电流密度为1×10-3A/cm-2).电流-电压测试分析表明,在FN隧穿条件下,SiC/Al2O3之间的势垒高度为1.4eV,已达到制作SiCMISFET器件的要求.同时,在整个栅压区域也受Frenkel-Poole和Schottky机制的共同影响.
Ultrathin (~ 4nm) Al 2 O 3 Insulated Gate High Permittivity SiCMIS Capacitor was fabricated on the 4H-SiC (0001) 8 ° N- / N + epitaxial layer by atomic layer deposition (ALD) / SiC interface microstructure and electrical properties analysis showed that the Al2O3 dielectric film obtained by the experiment has good physical properties and interface characteristics, the breakdown electric field of the Al2O3 film is 25MV / cm, and at an acceptable interface state density (2 × 1013cm- 2), the gate leakage current (1 × 10-3 A / cm-2 under 8MV / cm electric field) is smaller than that of SiC / Al2O3 under the condition of FN tunneling Of the barrier height of 1.4eV, has reached the production of SiCMISFET device requirements.At the same time, the gate voltage region is also affected by the Frenkel-Poole and Schottky mechanisms together.