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小尺寸金属氧化物半导体场效应晶体管(MOSFET)器件由于具有超薄的氧化层、关态栅隧穿漏电流的存在严重地影响了器件的性能,应变硅MOSFET器件也存在同样的问题.为了说明漏电流对新型应变硅器件性能的影响,文中利用积分方法从准二维表面势分析开始,提出了小尺寸应变硅MOSFET栅隧穿电流的理论预测模型,并在此基础上使用二维器件仿真软件ISE进行了仔细的比对研究,定量分析了在不同栅压、栅氧化层厚度下MOSFET器件的性能.仿真结果很好地与理论分析相符合,为超大规模集成电路的设计提供了有价值的参考.
Due to the ultra-thin oxide layer, the presence of the off-state gate-tunneling leakage current seriously affects the performance of the devices, and the same problem exists in the strained silicon MOSFET devices. To illustrate Leakage current on the performance of a new strained silicon device. In this paper, by using the integral method, a theoretical prediction model of the gate tunneling current of a strained silicon MOSFET is proposed based on quasi-2D surface potential analysis. Based on this, a two-dimensional device simulation The software ISE has conducted a careful comparison study to quantitatively analyze the performance of MOSFET devices under different gate voltage and gate oxide thickness.The simulation results are in good agreement with the theoretical analysis and provide valuable information for the design of VLSI The reference.