Nano-hole patterned sapphire substrates(NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography(LIL) combined with reactive ion etching(RIE) and inductively coupled plasma(ICP) techniques. Gallium nitride(Ga N)-based light emitting diode(LED) structure was grown on NHPSS by metal organic chemical vapor deposition(MOCVD). Photoluminescence(PL) measurement was conducted to compare the luminescence efficiency of the Ga N-based LED structure grown on NHPSS(NHPSS-LED) and that on unpatterned sapphire substrates(UPSS-LED). Electroluminescence(EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 m A. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of Ga N epilayer and light extraction efficiency of LEDs at the same time. Nano-hole patterned sapphire substrates (NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography (LIL) combined with reactive ion etching (RIE) and inductively coupled plasma (ICP) techniques. (Ga) -based light emitting diode (LED) structure was grown on NHPSS by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement was conducted to compare the luminescence efficiency of the Ga N-based LED structure grown on The NHPSS (NHPSS-LED) and that on unpatterned sapphire substrates (UPSS-LED). Electroluminescence (EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 m A. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of Ga N epilayer and light extraction efficiency of LEDs at the same time.