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目前,在国内集成电路生产中,通常采用PN结隔离工艺和介质隔离工艺.其中PN结隔离工艺又以锑隐埋单面隔离为常见.磷隐埋对通隔离工艺国内只有个别高等院校采用,工厂极为少见.国外象CA3094等也是采用这种工艺制作的.我们在生产集成电路的一些品种中,摸索应用这一工艺.体会到,它与传统的单面隔离工艺相比,有许多独特的优点,有推广应用的价值.一、简单原理及工艺比较图1是单面隔离和对通隔离示意图.
At present, in the domestic integrated circuit production, usually using PN junction isolation process and dielectric isolation process which PN junction isolation process and antimony buried single-sided isolation is common.Phosphorus buried on the isolation process used only by individual institutions of higher learning, Factories are extremely rare.Foreign countries such as CA3094 is also made using this process.We have found some varieties of integrated circuits in the application of this process.Experience, it is compared with the traditional single-sided isolation process, there are many unique Advantages, the value of popularization and application.A simple principle and process comparison Figure 1 is a single-sided isolation and isolation diagram.