A Single Mode Hybrid Ⅲ-Ⅴ/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Int

来源 :Chinese Physics Letters | 被引量 : 0次 | 上传用户:vpnyoyo
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A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated.A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography.Then,a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate.The single mode laser is flip-chip bonded on the laser mounting stage.The lasing light is butt-coupling to the silicon waveguide.The laser power output from a silicon waveguide is 1.3mW,and the threshold is 37 mA at room temperature and continuous wave operation. A single mode hybrid III-Ⅴ / silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP / AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Chen, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. -chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3 mW, and the threshold is 37 mA at room temperature and continuous wave operation.
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