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在铜基体表面电沉积铜-金刚石复合过渡层,采用电镀铜加固突出基体表面的金刚石颗粒,最后利用热丝化学气相沉积(HFCVD)法在复合过渡层上沉积大面积的与基体结合牢固的连续金刚石膜。采用扫描电子显微镜、拉曼光谱和压痕试验对所沉积的金刚石膜的表面形貌、内应力及膜/基结合性能进行研究。结果表明:金刚石膜由粗大的立方八面体颗粒与细小的(111)显露面颗粒组成,细颗粒填充在粗颗粒之间,形成连续的金刚石膜。复合过渡层中的露头金刚石经CVD同质外延生长成粗金刚石颗粒,而铜表面与粗金刚石之间的二面角上的二次形核繁衍长大成细金刚石颗粒。金刚石膜/基结合力的增强主要来源于金刚石膜与基体之间形成镶嵌咬合和较低的膜内应力。
The copper-diamond composite transition layer is electrodeposited on the surface of the copper substrate, and the diamond particles protruding from the surface of the substrate are reinforced by copper electroplating. Finally, a large area of continuous solid substrate is deposited on the composite transition layer by hot wire chemical vapor deposition (HFCVD) Diamond film. The surface morphology, internal stress and film / substrate bonding properties of the deposited diamond films were studied by scanning electron microscopy, Raman spectroscopy and indentation test. The results show that the diamond film consists of coarse cubic octahedral particles and fine (111) exposed particles, and the fine particles are filled between the coarse particles to form a continuous diamond film. The outcrop diamond in the composite transitional layer grows into coarse diamond particles by CVD homogenization, and the secondary nuclei on the dihedral angle between the copper surface and coarse diamond multiply and grow into fine diamond particles. The enhancement of the diamond film / base bonding force mainly comes from the mosaic bite between the diamond film and the base and the lower film stress.